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AFT09MS031NR1 AFT09MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance
(13.6 Vdc, IDQ
= 500 mA, TA
=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
764
18.0
74.1
32
870
17.2
71.0
31
941
15.7
68.1
31
800 MHz Broadband Performance
(13.6 Vdc, IDQ
= 100 mA, TA
=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
760
15.7
62.0
44
820
15.7
63.0
37
870
15.5
61.0
36
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test
Voltage
Result
870
(1)
CW
>65:1 at all
Phase Angles
1.2
(3 dB Overdrive)
17
No Device
Degradation
870
(2)
2.0
(3 dB Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760--870 MHz broadband reference circuit.
Features
?
Characterized for Operation from 764 to 941 MHz
?
Unmatched Input and Output Allowing Wide Frequency Range Utilization
?
Integrated ESD Protection
?
Integrated Stability Enhancements
?
Wideband ? Full Power Across the Band (764?870 MHz)
?
225°C Capable Plastic Package
?
Exceptional Thermal Performance
?
High Linearity for: TETRA, SSB, LTE
?
Cost--effective Over--molded Plastic Packaging
?
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
?
Output Stage 800 MHz Trunking Band Mobile Radio
?
Output Stage 900 MHz Trunking Band Mobile Radio
Document Number: AFT09MS031N
Rev. 1, 8/2012
Freescale Semiconductor
Technical Data
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
AFT09MS031NR1
AFT09MS031GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT09MS031NR1
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT09MS031GNR1
?
Freescale Semiconductor, Inc., 2012.
All rights reserved.
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